ã€China Instrument Network Instrument Development】 A cross-school research team composed of National Taiwan University, Ocean University, and China National Cheng Kung University, using graphene, zinc oxide and silicon three-junction design, successfully created a high sensitivity A self-powered photodetector with fast response and wide spectral detection range.
In the latest issue of Applied Physics Letters, “Self-powered and broadband photodetectors based on graphene/ In the article “ZnO/silicon triple junctionsâ€, the device has a broad spectrum detection range of 1,000 nm to 400 nm, covering the visible spectrum to infrared. News-self-powered-photodetector According to the researchers, this component uses a thin layer of graphene as a transparent electrode on the top layer and acts as an effective collection layer for light-generating carriers. A thin layer of zinc oxide (ZnO) between graphene and silicon functions as an anti-reflection layer for capturing incident light and increasing light absorption.
The built-in electric field at the interfaces of graphene/zinc oxide and zinc oxide/silicon enhances the charge isolation between photo-generated electrons and hole pairs, making the sensitivity and response time of the module comparable to that of graphene/silicon. Mass interface components are much improved.
By choosing the right frequency band calibration and the uniqueness of different materials, researchers were able to design components with high sensitivity and fast response time - from near ultraviolet (UV) to infrared wavelength range. The boot response time for implementing the prototype is approximately 280μs, but the Taiwanese team expects this number to fall below 100μs.
Because this self-powered photodetector has a simple architecture that is compatible with silicon manufacturing processes, researchers hope it will also find many new applications in ultra-low power applications, including next-generation optoelectronic components.
(Original title: Graphene-based photodetectors are self-powered)
In the latest issue of Applied Physics Letters, “Self-powered and broadband photodetectors based on graphene/ In the article “ZnO/silicon triple junctionsâ€, the device has a broad spectrum detection range of 1,000 nm to 400 nm, covering the visible spectrum to infrared. News-self-powered-photodetector According to the researchers, this component uses a thin layer of graphene as a transparent electrode on the top layer and acts as an effective collection layer for light-generating carriers. A thin layer of zinc oxide (ZnO) between graphene and silicon functions as an anti-reflection layer for capturing incident light and increasing light absorption.
The built-in electric field at the interfaces of graphene/zinc oxide and zinc oxide/silicon enhances the charge isolation between photo-generated electrons and hole pairs, making the sensitivity and response time of the module comparable to that of graphene/silicon. Mass interface components are much improved.
By choosing the right frequency band calibration and the uniqueness of different materials, researchers were able to design components with high sensitivity and fast response time - from near ultraviolet (UV) to infrared wavelength range. The boot response time for implementing the prototype is approximately 280μs, but the Taiwanese team expects this number to fall below 100μs.
Because this self-powered photodetector has a simple architecture that is compatible with silicon manufacturing processes, researchers hope it will also find many new applications in ultra-low power applications, including next-generation optoelectronic components.
(Original title: Graphene-based photodetectors are self-powered)
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